Daniel Moraru is currently Associate Professor at Shizuoka University, Faculty of Engineering and Research Institute of Electronics, in Hamamatsu, Japan. In 2007, he received his Doctor of Engineering degree in Nanovision Science at Shizuoka University.
Since then, for more than 15 years, he has been working on the development of a unique research direction for semiconductor nanoscale devices, aiming for atomic- and molecular-scale electronics by utilizing dopant atoms (or “molecules”) in silicon. Through such research, he and his group are contributing to the advancement of a field coined “dopant-based electronics”, combining advanced CMOS technology with fundamental physics. His research ranges from fundamental simulations of atomistic effects in Si nanowire structures and devices to semiconductor-device fabrication at nanoscale and electrical characterization to reveal single-electron tunneling features and other quantum-mechanical phenomena in nanostructures for modern electronics.
He published more than 70 papers in peer-reviewed journals, contributed to 3 book chapters and was a first author or co-author on more than 300 presentations in international conferences and domestic conferences in Japan. He received several awards, such as Young Scientist Presentation Award in the 2007 Meeting of the Japan Society of Applied Physics or the Young Scientist Gold Award in the 2013 IUMRS-IECM Conference, among others.
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